AISTDepartment of Energy and Environment
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AIST : Global Zero Emission Research Center (GZR)Research TopicsSelected as the Journal Cover | InGaP/GaAs dual-junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy (Wiley Online Library PROGRESS IN PHOTOVOLTAICS)

Selected as the Journal Cover | InGaP/GaAs dual-junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy (Wiley Online Library PROGRESS IN PHOTOVOLTAICS)

Date published : DEC. 31, 2021

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Selected as the Journal Cover | InGaP/GaAs dual-junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy (Wiley Online Library PROGRESS IN PHOTOVOLTAICS)

A paper by our researchers in Multijunction PV Team was featured on the cover page of Progress in Photovoltaics. For more information, please click here.

The paper concerned

Shoji, Y.; Oshima, R.; Makita, K.; Ubukata, A.; Sugaya, T., InGaP/GaAs dual-junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy, Prog. Photovoltaics 2021, 29 (12), 1285-1293, 10.1002/pip.3454

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AIST : Global Zero Emission Research Center (GZR)Research TopicsSelected as the Journal Cover | InGaP/GaAs dual-junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy (Wiley Online Library PROGRESS IN PHOTOVOLTAICS)