Silpawilawan, W.; Tanuslip, S.; Chetty, R.; Ohta, M.; Ohishi, Y.; Muta, H.; Kurosaki, K., Realizing excellent n‐ and p‐type Niobium‐based half‐heusler compounds based on thermoelectric properties and high‐temperature stability, Adv. Electron. Mater. 2020, 6(6), 2000083, 10.1002/aelm.202000083

Published APR 13 2020

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