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10.1109/JPHOTOV.2020.3033420 Published NOV 10 2020
Matsui, T.; Bivour, M.; Hermle, M.; Sai. H., Atomic-Layer-Deposited TiOx Nanolayers Function as Efficient HoleSelective Passivating Contacts in Silicon Solar Cells, ACS Appl. Mater. Interfaces 2020, 12(44) , 49777–49785,
10.1021/acsami.0c14239 Published OCT 22 2020
Tayagaki, T.; Oshima, R.; Shoji, Y.; Sugaya, T., Luminescence effects on subcell current-voltage analysis in InGaP/GaAs tandem solar cells, J. Photonics Energy 2020, 10(2), 025504,
10.1117/1.JPE.10.025504 Published JUN 05 2020
Shoji, Y.; Oshima, R.; Makita, K.; Ubukata, A.; Sugaya T., Effects of growth interruption on InGaP fabricated via hydride vapor phase epitaxy, J. Cryst. Growth 2020, 544, 125712,
10.1016/j.jcrysgro.2020.125712 Published MAY 12 2020
Shoji, Y.; Makita, K.; Sugaya, T., Multiple epitaxial lift-off of stacked GaAs solar cells for low-cost photovoltaic applications, Jpn. J. Appl. Phys. 2020, 59(5), 052003,
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Bürkle, M.; Lozac’h, M.; McDonald, C.; Macias-Montero, M.; Alessi, B.; Mariotti, D.; Švrček, V., Tuning the Bandgap Character of Quantum-Confined Si–Sn Alloyed Nanocrystals, Adv. Funct. Mater. 2020, 30(22), 1907210,
10.1002/adfm.201907210 Published APR 02 2020
Oshima, R.; Shoji, Y.; Makita, K.; Ubukata, A.; Sugaya, T., Evaluation of GaAs solar cells grown under different conditions via hydride vapor phase epitaxy, J. Cryst. Growth 2020, 537, 125600,
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10.1016/j.solmat.2020.110461 Published FEB 22 2020
Aihara, T.; Tayagaki, T.; Oshima, R.; Shoji, Y.; Makita, K.; Ubukata, A.; Sugaya, T., Analysis of subcell open-circuit voltages of InGaP/GaAs dual-junction solar cells fabricated using hydride vapor phase epitaxy, Jpn. J. Appl. Phys. 2020, 59, SGGF02,
10.35848/1347-4065/ab6a2d Published FEB 19 2020
Oshima, R.; Shoji, Y.; Makita, K.; Ubukata, A.; Sugaya, T., High Doping Performance of Sulfur and Zinc Dopants in Tunnel Diodes Using Hydride Vapor Phase Epitaxy, IEEE J. Photovolt. 2020, 10(3), 749-753,
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