産総研エネルギー・環境領域
JPEN
産総研：ゼロエミッション国際共同研究センター論文Hagiwara, T.; Suekuni, K.; Lemoine, P.; Supka, A.R.; Chetty, R.; Guilmeau, E.; Raveau, B.; Fornari, M.; Ohta, M.; Orabi, R.A.R.A.; Saito, H.; Hashikuni, K.; Ohtaki, M., Key role of d0 and d10 cations for the design of semiconducting colusites: large thermoelectric ZT in Cu26Ti2Sb6S32 compounds, Chem. Mat. 2021, 33(9), 3449–3456, 10.1021/acs.chemmater.1c00872

Hagiwara, T.; Suekuni, K.; Lemoine, P.; Supka, A.R.; Chetty, R.; Guilmeau, E.; Raveau, B.; Fornari, M.; Ohta, M.; Orabi, R.A.R.A.; Saito, H.; Hashikuni, K.; Ohtaki, M., Key role of d0 and d10 cations for the design of semiconducting colusites: large thermoelectric ZT in Cu26Ti2Sb6S32 compounds, Chem. Mat. 2021, 33(9), 3449–3456, 10.1021/acs.chemmater.1c00872

Published APR 28 2021

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産総研：ゼロエミッション国際共同研究センター論文Hagiwara, T.; Suekuni, K.; Lemoine, P.; Supka, A.R.; Chetty, R.; Guilmeau, E.; Raveau, B.; Fornari, M.; Ohta, M.; Orabi, R.A.R.A.; Saito, H.; Hashikuni, K.; Ohtaki, M., Key role of d0 and d10 cations for the design of semiconducting colusites: large thermoelectric ZT in Cu26Ti2Sb6S32 compounds, Chem. Mat. 2021, 33(9), 3449–3456, 10.1021/acs.chemmater.1c00872